Abstract Submitted to the    NANOTUBE'04 Conference:

We present a novel infrared emitting device based on an ambipolar carbon nanotube field-effect transistor with long channel length. Electrons and holes are injected into the nanotube from opposite contacts and recombine in a small segment of the carbon nanotube. The gate-control in 1D allows us to move the ambipolar domain and the nanoscale light source between the two contacts along the carbon nanotube. At high bias we also observe local minority carrier generation through Zener tunneling or Avalanche breakdown. Most importantly, the spatially resolved electroluminescence provides valuable insight into the nanotube transistor behavior.