Abstract Submitted to the    NANOTUBE'04 Conference:

For future applications of carbon nanotubes (CNTs) to LSI interconnects, size-classified catalyst particles have been injected into holes for LSI interconnects and aligned carbon nanotubes have been grown in the holes. Size-classified cobalt particles were obtained using a method reported previously [1]. Briefly, particles were produced by laser ablation, annealed with a furnace, and size-classified with a differential mobility analyzer at a pressure of 1.1 kPa. 5nm cobalt particles thus produced were injected into a high vacuum chamber (pressure: 1 x 10^-3 Pa) utilizing differential pumping to make a directed particle beam. The particles were directed to a substrate with holes for LSI interconnects. They were deposited at the bottom of the holes with a diameter as small as 150 nm and an aspect ratio (depth/diameter) of 2.8. CNTs were then grown by hot filament chemical vapor deposition using acetylene. The growth temperature and pressure were 540 degrees Celsius and 1 kPa, respectively. Aligned multi-walled carbon nanotubes were successfully grown in the holes. This work was supported by the Advanced Nanocarbon Application Project, which was consigned to Japan Fine Ceramics Center (JFCC) by New Energy and Industrial Technology Development Organization (NEDO) of Japan.