Abstract Submitted to the    NANOTUBE'04 Conference:

We aim to utilize the excellent characteristics of Multi-walled carbon nanotubes (MWNTs) for electronics applications. The growing ideal MWNTs by a thermal chemical vapor deposition (CVD) method typically requires a temperature higher than 800 oC, which is too high for LSI applications. We demonstrate that by controlling the thickness of catalyst metal and base metal, MWNTs were grown at 450 oC by CVD method. We used titanium metal as the base metal, and nickel, cobalt and iron as the catalyst metal. The thickness of catalyst metals was 1nm. The growth condition is as follows: the substrate was heated to 450 oC, and was cleaned for ten minutes in a hydrogen gas at 1kPa. Subsequently, a mixture of acetylene and argon gases was introduced for MWNTs growth. The pressure of the mixture gases was 1kPa. The result was that MWNTs were successfully grown at 450 oC by using cobalt as a catalyst. There are no MWNTs in the case of nickel or iron catalyst at the same growth conditions. We co nformed by TEM image that these MWNTs had well-graphitized graphen sheets. The growth of the MWNTs also depends on whether the catalyst is on the base metal or not. This work was supported by the Advanced Nanocarbon Application Project, which was consigned to Japan Fine Ceramics Center (JFCC) by New Energy and Industrial Technology Development Organization (NEDO) of Japan.