NANOTUBE'04 Conference:
Single and Double Resonance Raman G-band Processes in Carbon Nanotubes
M. Souza (1), A. Jorio (1), C. Fantini (1), B. R. A. Neves (1), M. A. Pimenta (1), R. Saito (2), A. Ismach (3), E. Joselevich (3), V. W. Brar (4), Ge. G. Samsonidze (4), G. Dresselhaus (4) and M. S. Dresselhaus (4).Following a recent debate about the resonance nature of the tangential (G) band in the Raman spectra of single-wall carbon nanotubes (SWNT) we measured the Raman spectra of isolated and bundled (aligned and misaligned) SWNT samples, with different excitation laser energies (Elaser). This study shows that the G band can be originated from both single and double resonance mechanisms. By performing Raman spectroscopy using different Elaser, we can separate the contribution from single and double resonance processes. The G band has a single resonance scattering nature with a strong intensity in non-defective nanotubes. These G band spectra present a non-disperse behavior and keep the selection rules of the first-order Raman scattering. However, in defectives samples, the G band spectra is two orders of magnitude lower than the spectra in non-defective sample, and it is composed both by single resonance and dispersive defect-induced double resonance processes.
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