Abstract Submitted to the    NANOTUBE'04 Conference:

Millimeter-long and vertically-aligned MWNTs have been successfully grown by grid-inserted plasma-enhanced CVD. The key growth technologies are (1) a grid insertion between anode and cathode to suppress the ion bombardment damage and (2) thin Fe (1 nm)/Ti (1 nm) double layer catalyst. The ion bombardment damage was suppressed when grid-cathode voltage was 2 – 10 V. The thicknesses of both Fe and Ti were very important to grow the long MWNTs. When the thicknesses of metals became larger than 5 nm, the growth rate drastically decreased. 0.6 mm long MWNTs were grown at 600 C for 60 minutes using CH₄. Ni and Cr were not effective as buffer layer to grow long MWNTs.