Log Number: P23
Abstract Submitted to the    NANOTUBE'04 Conference:

Carbon Nanotube p-n Junction Diode

Ji Ung Lee

GE Global Research Center
Contact e-mail: leeji@research.ge.com

We demonstrate a single walled carbon nanotube p-n junction diode device. The p-n junction is formed along a single nanotube. The diode current-voltage characteristics show forward conduction and reverse blocking characteristics, i.e. rectification. The diode has a well-defined electron-hole recombination region and the characteristics show near ideal diode characteristics at low bias conditions.

This document at the URL http://materials.ipicyt.edu.mx/~nt04-abstracts/P23.html
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