Abstract Submitted to the    NANOTUBE'04 Conference:

To product the endohedral complexes of fullerene - like structures there were performed calculation, design and development of an electrophysical facility (implantator). The implantator is a source of pulverizer type with a caesium heating reservoir and a spherical ionizer. Principle of the source operation is the following: positive caesium ions are ionized on the spherical surface of ionizer (anode), the temperature of which is ~1100 degrees Celsius, then they are accelerated by electric field and atomize the lithium target, encapsulated hollow cylindrical tube (cathode). Being produced negative Li ions are drawn out by magnetic field from the source thorough the hole of ionizer. Li ion beam is analyzed by mass-spectrometer and at an angle of 90 degrees enters into irradiation chamber getting at the thin film of fullerene-like target. While adjusting the implantator there were obtained ion currents of the following ions: C^- =10 micro amps, O^-=20 micro amps, H^-= 1 micro amps, Li^-=0.6 micro amps, Fe^-=2 micro amps, Cu^-=0.75 micro amps. When developing the technique of a thin film evaporation of C60 onto the implantator backing there was determined experimentally the temperature dependence of C60 evaporation rate onto implantator backing. At the temperature range of 300-500 degrees Celsius it is governed by the following dependence V=0.0005e^0.0283T(molecules/sec). This work was supported by the ISTC project No.2511.