Abstract Submitted to the    NANOTUBE'04 Conference:

SiC is one of the most important semiconductors as it is a wide band gap material, suitable for high temperature, high frequency, and high power applications.In particular, nanorods of SiC could possess some properties that might be distinctive from their bulk,i.e. they exhibit a unique blue photoluminescence emission at room temperature, they show a Young-modulus of 600GPA and an excellent electron field emission. In this presentation we describe a new method for the synthesis of pure SiC- nanorods by using the chemical vapor deposition. Similar to the growth of single and multi-walled carbon nanotubes, SiC nanorods grow about a catalytically controlled process. Suitable catalyst are Fe, Ni or Co. For the deposition we used metallocenes of these metals, a hydrocarbon (CH4 or hexane) and as the precursor for silicon the liquid SiCl4. HRTEM-investigations with EEL and EDX- analysis show the well- developed SiC-nanorods with a C/Si –ratio of 1. The yield of SiC is depended on the gas phase composition, the deposition temperature and the deposition time. The process is up-scable and a deposition on templated or prestructured substrates is possible.