Log Number: P52
Abstract Submitted to the    NANOTUBE'04 Conference:

A Novel Dual-Function CNT-Gated CNT Thin Film Transistors

Jeng-Hua Wei, Hsin-Hui Chen, Hung-Hsiang Wang, Ming-Jiunn Lai, Ming-Jer Kao, and Ming-Jinn Tsai

Electronics Research & Service Organization (ERSO), ITRI, Hsinchu, Taiwan, ROC
Contact e-mail: jhwei@itri.org.tw

In this paper, a novel dual-function CNT-gated carbon nanotube thin film transistor (CNTFET) is introduced. By using CNT as the gate electrode, a sub-50 nm CNTFET is successfully fabricated. Besides, the CNT-gated CNTFET still shows good FET characteristics after exchanging the gate and source/drain electrodes. This unique dual-function characteristic will provide new design rule in the future CNT electronics circuit.

This document at the URL http://materials.ipicyt.edu.mx/~nt04-abstracts/P52.html
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