Abstract Submitted to the    NANOTUBE'04 Conference:

In this paper, we report a tunable conduction-type structure of carbon nanotube field effect transistor (CNT-FET). In this study, a special designed top narrow gate is added in order to modulate the energy band within the middle region of one single CNT. Depending on the positive or negative bias of the gate voltage, the CNT-FET can be operated in either p-type or n-type conduction. We explain the physical mechanism of this tunable conduction-type device structure by the energy band diagram and also demonstrate the conversion of electrical characteristics from the n-type CNTEFT to p-type like behavior.